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Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3

机译:拓扑绝缘体Bi2Se3的表面和本体自旋轨道耦合中的巨自旋泵浦和逆自旋霍尔效应

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摘要

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling (SOC) and the existence of spin-textured surface states that might be potentially exploited for "topological spintronics." Here, we use spin pumping and the inverse spin Hall effect to demonstrate successful spin injection at room temperature from a metallic ferromagnet (CoFeB) into the prototypical 3D topological insulator Bi2Se3. The spin pumping process, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) line width. Theoretical modeling of spin pumping through the surface of Bi2Se3, as well as of the measured angular dependence of spin-charge conversion signal, suggests that pumped spin current is first greatly enhanced by the surface SOC and then converted into a dc-voltage signal primarily by the inverse spin Hall effect due to SOC of the bulk of Bi2Se3. We find that the FMR line width broadens significantly (more than a factor of 5) and we deduce a spin Hall angle as large as 0.43 in the Bi2Se3 layer.
机译:三维(3D)拓扑绝缘子以其强大的自旋轨道耦合(SOC)以及存在自旋纹理化表面状态而闻名,这些表面状态可能会被“拓扑自旋电子学”利用。在这里,我们使用自旋泵浦和逆自旋霍尔效应来证明在室温下成功地将自金属铁磁体(CoFeB)注入到原型3D拓扑绝缘体Bi2Se3中。在金属铁磁体的磁化动力学的驱动下,自旋泵浦过程将自旋电流引入拓扑绝缘体层,从而导致铁磁共振(FMR)线宽变宽。通过Bi2Se3的表面进行自旋泵浦的理论模型,以及测得的自旋电荷转换信号的角度依赖性,表明泵浦的自旋电流首先通过表面SOC大大增强,然后主要通过以下方法转换为直流电压信号: Bi2Se3的SOC导致的自旋霍尔效应反演。我们发现FMR线宽显着加宽(大于5倍),并且我们推断Bi2Se3层中的自旋霍尔角高达0.43。

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