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Effects of silole content and doping on the electronic structures and excitation energies of silole/thiophene cooligomers

机译:硅酮含量和掺杂对硅酮/噻吩冷单体的电子结构和激发能的影响

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摘要

The effects of siloles and doping with positive and negative charges on the electronic structures and band gaps of the silole/thiophene copolymers are studied employing the density functional theory and the time-dependent density functional theory with B3LYP functional. The optimized geometries, the calculated excitation energies, and the extrapolated band gaps agree with the available experimental results. The decreasing trend of the calculated band gaps with the increasing silole content in the silole/thiophene copolymers is in good agreement with experimental observations. Doping significantly shortens the carbon-carbon distances along the backbones and lowers the excitation energies of thiophene oligomers and silole/thiophene cooligomers relative to those of the neutral ones. Moreover, the low oxidized states have the lower vertical excitation energies than the high oxidized ones. There also exists the even/odd effect in excitation energies of the charged oligomers. The doped copolymers with higher silole content are suggested to be the potential conducting polymers with narrow band gaps. The injected charges by doping lead to the formations of polarons or bipolarons, which are characterized by the distortions in geometries, fluctuations in the bond order waves and spin densities. The even/odd effect in excitation energies is also qualitatively explained by the different widths of subgaps split by the formations of polaron and biopolaron. [References: 34]
机译:利用密度泛函理论和随时间变化的具有B3LYP官能度的密度泛函理论研究了硅烷和正负电荷掺杂对硅烷/噻吩共聚物电子结构和带隙的影响。优化的几何形状,计算出的激发能和外推带隙与可用的实验结果一致。随着硅烷/噻吩共聚物中硅烷含量的增加,带隙的计算趋势下降,与实验观察结果吻合良好。相对于中性原子,掺杂显着缩短了沿主链的碳-碳距离,并降低了噻吩低聚物和甲硅烷基/噻吩低聚物的激发能。此外,低氧化态具有比高氧化态更低的垂直激发能。带电的低聚物的激发能中还存在奇/奇效应。建议具有较高甲硅烷基含量的掺杂共聚物是具有窄带隙的潜在导电聚合物。通过掺杂注入的电荷导致极化子或双极化子的形成,其特征在于几何形状的扭曲,键序波的波动和自旋密度。定性地解释了激发能中的奇/奇效应是由于极化子和生物极化子的形成而使子间隙的宽度不同。 [参考:34]

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