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Silicon/Wolfram Carbide@Graphene composite: enhancing conductivity and structure stability in amorphous-silicon for high lithium storage performance

机译:硅/ Wolfram碳化物@石墨烯复合材料:增强非晶硅中的电导率和结构稳定性,以实现高锂存储性能

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Improving the electron conductivity and lithiated structure stability for Si anodes can result in high stable capacity in cells. A Silicon/Wolfram Carbide@Graphene (SW@G) composite anode is designed and produced by a simple two-step ball milling the mixture of coarse-grained Si with good conductive wolfram carbide (WC) and graphite. The SW@G composite consists of multiple-scale WC particles, which are uniformly distributed in amorphous Si matrices, and wrapped by graphene nanosheets (GNs) on the outside. Owing to the unique concrete-like core-shell structure, the wrapping of GNs on the Si improves the conductivity and structural stability of the composite. The inner WC particles which tightly connect the Si and graphene act as the cornerstone to resist large volumetric expansion of Si during charge/discharge, and in particular serve as the high-speed channels of electrons as well as provide more interface paths for Li+ to accelerate their transfer inside the Si. These contribute to the excellent electrochemical properties of SW@G composite anode, including high volumetric capacity (three times higher than that of graphite), superior rate capability, and long-life stable cycleability. The synthetic method developed in this work paves the way for large-scale manufacturing of high performance Li storage anodes using commercially available materials and technologies. (C) 2016 Elsevier Ltd. All rights reserved.
机译:改善硅阳极的电子电导率和锂化结构的稳定性可以导致电池中的高稳定容量。通过简单的两步球磨,将粗晶粒硅与导电性良好的碳化钨(WC)和石墨的混合物进行简单的两步球磨,设计并生产了硅/碳化钨(SW @ G)复合阳极。 SW @ G复合材料由多尺度的WC颗粒组成,这些颗粒均匀地分布在非晶硅基质中,并由外部的石墨烯纳米片(GNs)包裹。由于独特的类混凝土核壳结构,GNs在Si上的包裹改善了复合材料的导电性和结构稳定性。紧密连接Si和石墨烯的内部WC颗粒充当了基石,可在充电/放电过程中抵抗Si的大体积膨胀,特别是充当电子的高速通道,并为Li +提供了更多的界面路径来加速将它们转移到Si中。这些有助于SW @ G复合阳极的出色电化学性能,包括高体积容量(比石墨高三倍),优异的倍率能力和长寿命的稳定循环能力。在这项工作中开发的合成方法为使用可商购的材料和技术大规模制造高性能锂存储阳极铺平了道路。 (C)2016 Elsevier Ltd.保留所有权利。

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