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The effects of surface oxidation and fluorination of boron-doped diamond anodes on perchlorate formation and organic compound oxidation

机译:掺硼金刚石阳极的表面氧化和氟化对高氯酸盐形成和有机化合物氧化的影响

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This research investigated the effects of surface functional groups on both rates of organic compound oxidation (phenol, p-nitrophenol, benzoquinone, and oxalic acid) and perchlorate (ClO4-) formation at boron-doped diamond (BDD) film anodes at 20 degrees C. X-ray photoelectron spectroscopy measurements determined that various oxygenated functional groups (e.g., C-OH, C=O, COOH) were incorporated on the BDD surface by applying an anodic ageing process, and fluorine functional groups (e.g., C-F, were incorporated by electrochemical oxidation of aqueous perfluorooctanoic acid solutions. Batch oxidation experiments revealed that ClO4- formation via the oxidation of ClO3- was highly variable during anodic ageing, which was attributed to changes in oxygenated functional groups, while organic compound oxidation rates were not significantly affected. The fluorinated electrode showed a lower ClO4- formation rate (19 +/- 4 mu moles m(-2) min(-1)) compared to the oxygenated electrode (436 +/- 26 mu moles m(-2) min(-1)) indicating the fluorinated surface limits ClO4- production. Measurement of the electrode response to the Fe(CN)(6)(3-/4-) redox couple using cyclic voltammetry and electrochemical impedance spectroscopy indicated that lower ClO4- formation on the fluorinated electrode was likely a result of dipole-dipole interactions between the negatively charged F atoms and ClO3- and steric hindrance caused by the perfluorocarbon chains. This effect along with the hydrophobicity of the fluorinated electrode resulted in significantly lower ClO4- formation (96% decrease) while slightly enhancing measured oxidation rates of hydrophobic organic compounds. The use of benzoquinone as OH center dot probe confirmed that the fluorination process did not inhibit OH center dot production. The rate of benzoquinone oxidation was 2212 +/- 183 mu moles m(-2) min(-1) on the oxygenated electrode and 2926 +/- 201 mu moles m(-2) min(-1) on the fluorinated electrode. Density functional theory calculations indicated that the fluorination of the BDD surface by both F atoms and perfluorinated carbon radicals ((CnF2n+1)-C-center dot) of varying chain lengths (n=1 to 7) was feasible, and that the fluorinated edge sites (=C-CnF2n+1) were more electrochemically stable than fluorinated planar sites ( C-CnF2n+1). (C) 2015 Elsevier Ltd. All rights reserved.
机译:这项研究调查了表面官能团对20℃下掺硼金刚石(BDD)薄膜阳极上有机化合物的氧化速率(苯酚,对硝基苯酚,苯醌和草酸)和高氯酸盐(ClO4-)形成的影响。 X射线光电子能谱测量确定通过应用阳极老化过程在BDD表面上结合了各种氧化官能团(例如,C-OH,C = O,COOH),并且结合了氟官能团(例如,CF)通过全氟辛酸水溶液的电化学氧化,批量氧化实验表明,在阳极老化过程中,由ClO3-氧化而形成的ClO4-的变化很大,这归因于氧化官能团的变化,而有机化合物的氧化速率没有受到显着影响。与含氧电极相比(436 +/- 26),含氟电极显示出较低的ClO4-生成速率(19 +/- 4μmol m(-2)min(-1)) μmol m(-2)min(-1)),表明氟化表面限制了ClO4-的产生。使用循环伏安法和电化学阻抗谱法测量电极对Fe(CN)(6)(3- / 4-)氧化还原对的响应表明,氟化电极上较低的ClO4-形成可能是由于两极之间的偶极-偶极相互作用引起的由全氟化碳链引起的带负电荷的F原子和ClO3-以及位阻。这种影响与氟化电极的疏水性一起导致ClO4的生成明显降低(降低96%),同时略微提高了疏水有机化合物的氧化速率。使用苯醌作为OH中心点探针证实了氟化过程不会抑制OH中心点的产生。苯醌的氧化速率在氧化电极上为2212 +/- 183摩尔m(-2)min(-1),在氟化电极上为2926 +/- 201摩尔m(-2)min(-1)。密度泛函理论计算表明,F原子和链长(n = 1至7)不同的全氟化碳自由基((CnF2n + 1)-C中心点)对BDD表面的氟化是可行的,并且氟化边缘位点(= C-CnF2n + 1)比氟化的平面位点(C-CnF2n + 1)在电化学上更稳定。 (C)2015 Elsevier Ltd.保留所有权利。

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