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The impact of surface coverage on the kinetics of electron transfer through redox monolayers on a silicon electrode surface

机译:表面覆盖对通过硅电极表面上的氧化还原单层的电子转移动力学的影响

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The impact of the coverage of ferrocene moieties, attached to a silicon electrode modified via hydrosilylation of a dialkyne, on the kinetics of electron transfer between the redox species and the electrode is explored. The coverage of ferrocene is controlled by varying the coupling time between azidomethylferrocene and the distal alkyne of the monolayer via the copper assisted azide-alkyne cycloaddition reaction. All other variables in the surface preparation are maintained identical. What is observed is that the higher the surface coverage of the ferrocene moieties the faster the apparent rates of electron transfer. This surface coverage-dependent kinetic effect is attributed to electrons hopping between ferrocene moieties across the redox film toward hotspots for the electron transfer event. The origin of these hotspots is tentatively suggested to result from minor amounts of oxide on the underlying silicon surface that reduce the barrier for the electron transfer. (C) 2015 Elsevier Ltd. All rights reserved.
机译:探索了二茂铁基团的覆盖度,该二茂铁基团的覆盖度与通过二烯丙基的氢化硅烷化改性的硅电极相连,对氧化还原物质与电极之间电子转移动力学的影响。二茂铁的覆盖率是通过铜辅助的叠氮化物-炔烃环加成反应,改变叠氮基甲基二茂铁与单分子层的远端炔烃之间的偶联时间来控制的。表面处理中的所有其他变量保持相同。观察到二茂铁部分的表面覆盖率越高,电子转移的表观速率越快。这种依赖于表面覆盖的动力学效应归因于电子在跨氧化还原膜的二茂铁部分之间朝着电子转移事件的热点跳跃。暂时建议这些热点的起源是由于下面的硅表面上的少量氧化物减少了电子传输的壁垒。 (C)2015 Elsevier Ltd.保留所有权利。

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