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Luminescence properties of Eu2+- and Ce3+-doped CaAl2S4 and application in white LEDs

机译:掺杂Eu2 +和Ce3 +的CaAl2S4的发光特性及其在白光LED中的应用

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The Eu2+ - and Ce3+ -doped CaAl2S4 phosphors were comparatively synthesized by conventional solid-state reaction and the evacuated sealed quartz ampoule. The X-ray diffraction (XRD) patterns show that the sample with better crystalline quality was prepared by the evacuated sealed quartz ampoule, resulting in the enhancement of the emission intensity of Eu2+ ion by a factor of 1.7. The intensive green LEDs were also fabricated by combining CaAl2S4:Eu (2+) with near-ultraviolet InGaN chips (lambda(em) = 395 nm). The dependence of as-fabricated green LEDs on forward-bias currents shows that it presents good chromaticity stability and luminance saturation, indicating that CaAl2S4:Eu2+ is a promising green-emitting phosphor for a near-UV InGaN-based LED. In addition, the optical properties of CaAl2S4:Ce3+ were systematically investigated by means of diffuse reflectance, photo luminescence excitation and emission, concentrating quenching and the decay curve. (C) 2008 Elsevier Inc. All rights reserved.
机译:通过常规的固态反应和真空密封的石英安瓿比较地合成了Eu2 +和Ce3 +掺杂的CaAl2S4荧光粉。 X射线衍射(XRD)图表明,通过抽真空的密封石英安瓿瓶可以制备出具有更好晶体质量的样品,从而使Eu2 +离子的发射强度提高了1.7倍。还通过将CaAl2S4:Eu(2+)与近紫外InGaN芯片(λ(em)= 395 nm)相结合来制造高强度绿色LED。制成的绿色LED对正向偏置电流的依赖性表明,它具有良好的色度稳定性和亮度饱和度,表明CaAl2S4:Eu2 +是近紫外InGaN基LED的有前途的绿色发光磷光体。此外,通过漫反射,光致发光和发射,集中猝灭和衰减曲线系统地研究了CaAl2S4:Ce3 +的光学性质。 (C)2008 Elsevier Inc.保留所有权利。

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