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Synthesis and Characterization of Thallium Containing Bismuth Based Superconducting Materials

机译:含hall铋基超导材料的合成与表征

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Bismuth based superconducting materials doped with thallium having a general formula Bi_(2-x)Tl_xPb_(0.4)Sr2Ca2Cu3O_y (x = 0.00, 0.05, 0.15, 0.25 and 0.35) were synthesized by the simple solid state reaction method. The effect of doping of thallium at the Bi-site, on the microstructure, electric and magnetic properties has been investigated through resistivity-temperature data, ac magnetic susceptibility and X-ray diffraction (XRD) analysis. It has been observed that the sample with thallium content, x = 0.25 has minimum room temperature resistivity value of 0.012 (ohm-cm) amongst all the samples studied here. The samples with x = 0.25 and 0.35 both have shown the highest Tc_(0) -109 K which is 4 K higher than that of the undoped sample. All of the samples were found to consist of both high-Tc (2223) and low-Tc (2212) phases in different proportions.
机译:通过简单的固态反应方法合成了掺有通式为Bi_(2-x)Tl_xPb_(0.4)Sr2Ca2Cu3O_y(x = 0.00、0.05、0.15、0.25和0.35)的al的铋基超导材料。通过电阻率-温度数据,交流磁化率和X射线衍射(XRD)分析,研究了Bi在双位点掺杂对微结构,电和磁性能的影响。已经观察到,在此研究的所有样品中,with含量x = 0.25的样品的最小室温电阻率值为0.012(ohm-cm)。 x = 0.25和0.35的样品都显示出最高的Tc_(0)-109 K,比未掺杂的样品高4K。发现所有样品均由不同比例的高Tc(2223)和低Tc(2212)相组成。

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