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EXAFS studies on Gd-doped ZrO2 thin films deposited by RF magnetron sputtering

机译:射频磁控溅射沉积Gd掺杂ZrO2薄膜的EXAFS研究

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摘要

ZrO2 thin films with 0%, 7%, 9%, 11%, and 13% Gd doping have been prepared by RF magnetron sputtering and have been characterized by grazing incidence x-ray diffraction, spectroscopic ellipsometry, and optical transmission measurements to probe their structural and optical properties. Extended x-ray absorption fine structure (EXAFS) measurements have also been carried out on the samples at the Zr K- and Gd L-3-edges. It has been observed that Gd goes to Zr sites up to 9%-11% doping concentration, and for Gd doping concentrations beyond 11%, Gd precipitates out as a separate Gd2O3 phase. The local structure information surrounding the Zr and Gd sites obtained from the analysis of the EXAFS studies have also been used to explain the macroscopic optical properties of the samples. (C) 2016 Optical Society of America
机译:掺有0%,7%,9%,11%和13%Gd的ZrO2薄膜已经通过RF磁控溅射制备,并通过掠入射X射线衍射,椭圆偏振光谱法和光学透射率测量来表征,以探测它们的特性。结构和光学性质。还对样品在Zr K-和Gd L-3-边缘进行了扩展的X射线吸收精细结构(EXAFS)测量。已经观察到,Gd到达Zr部位的掺杂浓度高达9%-11%,而当Gd掺杂浓度超过11%时,Gd会作为单独的Gd2O3相沉淀出来。通过EXAFS研究的分析获得的Zr和Gd位点周围的局部结构信息也已用于解释样品的宏观光学性质。 (C)2016美国眼镜学会

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