Temperature field analysis of single layer TiO_(2) film components induced by long-pulse and short-pulse lasers

摘要

To study the differences between the damaging of thin film components induced by long-pulse and short-pulse lasers, a model of single layer TiO_(2) film components with platinum high-absorptance inclusions was established. The temperature rises of TiO_(2) films with inclusions of different sizes and different depths induced by a 1 ms long-pulse and a 10 ns short-pulse lasers were analyzed based on temperature field theory. The results show that there is a radius range of inclusions that corresponds to high temperature rises. Short-pulse lasers are more sensitive to high-absorptance inclusions and long-pulse lasers are more easily damage the substrate. The first-damage decision method is drawn from calculations.