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Scanning Electrochemical Microscopy. 57. SECM Tip Voltammetry at Different Substrate Potentials under Quasi-Steady-State and Steady-State Conditions

机译:扫描电化学显微镜。 57.准稳态和稳态条件下,不同基质电势下的SECM伏安法

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We discuss SECM tip voltammetry, where a UME tip isheld above a conductive substrate within about a tip radius and a tip voltammogram is recorded as its potential is slowly scanned while the substrate is held at a fixed potential. When the potential of the substrate is changed, the series of steady-state tip voltammograms provide information about the reactants and products. When the potential of the substrate, E_(S), is set so that the reaction at the substrate is opposite to that at the tip (the usual SECM conditions), a total positive feedback (tpf) tip voltammogram is recorded. When the substrate potential is set to values where the reaction at the substrate is the same as that occurring on the tip, the tip is shielded from the species in the bulk solution. Depending upon the substrate potential, this can cause total shielding (ts) or a voltammogram that is the result of partial feedback/partial shielding (pf-ps). The result is a series of tip voltammograms that are characterized by tpf, pf-ps, or ts, depending upon E_(S). Experimental tip voltammograms resulting from the reversible reduction of TCNQ and oxidation of ferrocene in MeCN are reported. These are compared with those from simulations and approximate equations developed to describe the features of the tip voltammograms generated under tpf, ts, or pf-ps conditions. The effect of the diffusion coefficient ratio on the ability of the UME tip to reach a true steady state is also addressed and possible applications, e.g., obtaining information about the reversibility of an electrochemical reaction, the product of an electrochemical reaction, the stability of that product, or the diffusion coefficients of the electroactive species, are discussed.
机译:我们讨论了SECM尖端伏安法,其中将UME尖端保持在导电基体上方大约尖端半径之内,并记录尖端伏安图,因为在基体保持固定电势的同时缓慢扫描其电势。当基材的电势改变时,一系列的稳态尖端伏安图会提供有关反应物和产物的信息。当设置衬底的电势E_(S)时,使衬底处的反应与尖端处的反应相反(通常为SECM条件),记录总的正反馈(tpf)尖端伏安图。当将底物电势设置为某个值时,底物处的反应与尖端上发生的反应相同,则尖端就不会受到本体溶液中物质的影响。根据基板的电位,这可能会导致总屏蔽(ts)或伏安图,这是部分反馈/部分屏蔽(pf-ps)的结果。结果是一系列尖端伏安图,其特征在于tpf,pf-ps或ts,具体取决于E_(S)。报道了由TCNQ的可逆还原和MeCN中二茂铁的氧化产生的实验尖端伏安图。将这些与模拟和近似方程进行比较,以描述在tpf,ts或pf-ps条件下生成的尖端伏安图的特征。还解决了扩散系数比对UME尖端达到真正稳态的能力的影响,并提出了可能的应用,例如,获得有关电化学反应可逆性,电化学反应产物,稳定性的信息。讨论了电积的乘积或扩散系数。

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