A Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices

摘要

A novel small-molecule boron(III)-containing donor-acceptor compound has been synthesized and employed in the fabrication of solution-processable electronic resistive memory devices. High ternary memory performances with low turn-on (V-Th1=2.0V) and distinct threshold voltages (V-Th2=3.3V), small reading bias (1.0V), and long retention time (>10(4)seconds) with a large ON/OFF ratio of each state (current ratio of OFF, ON1, and ON2=1:10(3):10(6)) have been demonstrated, suggestive of its potential application in high-density data storage. The present design strategy provides new insight in the future design of memory devices with multi-level transition states.