...
首页> 外文期刊>ACS applied materials & interfaces >Characterization of ZnO Interlayers for Organic Solar Cells: Correlation of Electrochemical Properties with Thin-Film Morphology and Device Performance
【24h】

Characterization of ZnO Interlayers for Organic Solar Cells: Correlation of Electrochemical Properties with Thin-Film Morphology and Device Performance

机译:有机太阳能电池ZnO中间层的表征:电化学性能与薄膜形态和器件性能的相关性

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

This report focuses on the evaluation of the electrochemical properties of both solution-deposited sol gel (sg-ZnO) and sputtered (sp-ZnO) zinc oxide thin films, intended for use as electron-collecting interlayers in organic solar cells (OPVs). In the electrochemical studies (voltammetric and impedance studies), we used indium tin oxide (ITO) over coated with either sg-ZnO or sp-ZnO interlayers, in contact with either plain electrolyte solutions, or solutions with probe redox couples. The electroactive area of exposed ITO under the ZnO interlayer was estimated by characterizing the electrochemical response of just the oxide interlayer and the charge transfer resistance from solutions with the probe redox couples. Compared to bare ITO, the effective electroactive area of ITO under sg-ZnO films was ca. 70%, 10%, and 0.3% for 40, 80, and 120 nm sg-ZnO films. More compact sp-ZnO films required only 30 nm thicknesses to achieve an effective electroactive ITO area of ca. 0.02%. We also examined the electrochemical responses of these same ITO/ZnO heterojunctions overcoated with device thickness pure poly(3hexylthiophehe) (P3HT), and donor/acceptor blended active layers (P3HT:PCBM). Voltammetric oxidation/reduction of pure P3HT thin films on ZnO/ITO contacts showed that pinhole pathways exist in ZnO films that permit dark oxidation (ITO hole injection into P3HT). In P3HT:PCBM active layers, however, the electrochemical activity for P3HT oxidation is greatly attenuated, suggesting PCBM enrichment near the ZnO interface, effectively blocking P3HT interaction with the ITO contact. The shunt resistance, obtained from dark current voltage behavior in full P3HT/PCBM OPVs, was dependent on both (i) the porosity of the sg-ZnO or sp-ZnO films (as revealed by probe molecule electrochemistry) and (ii) the apparent enrichment of PCBM at ZnO/P3HT:PCBM_ interfaces, both effects conveniently revealed by electrochemical characterization. We anticipate that these approaches will be applicable to a wider array of solution -processed interlayers for "printable" solar cells.
机译:该报告集中于评估溶液沉积的溶胶凝胶(sg-ZnO)和溅射的(sp-ZnO)氧化锌薄膜的电化学性能,这些薄膜旨在用作有机太阳能电池(OPV)中的电子收集中间层。在电化学研究(伏安和阻抗研究)中,我们使用覆盖有sg-ZnO或sp-ZnO中间层的铟锡氧化物(ITO),与普通电解质溶液或探针氧化还原对溶液接触。通过仅表征氧化物中间层的电化学响应以及带有探针氧化还原对的溶液的电荷转移电阻,可以估算出ZnO中间层下暴露的ITO的电活性区域。与裸ITO相比,在sg-ZnO膜下ITO的有效电活性面积约为1。对于40、80和120 nm的sg-ZnO膜分别为70%,10%和0.3%。更紧凑的sp-ZnO膜仅需要30 nm的厚度即可获得约200 nm的有效电活性ITO面积。 0.02%。我们还检查了这些相同的ITO / ZnO异质结的电化学响应,这些异质结上覆盖了器件厚度的纯聚(3己基噻吩)(P3HT)和施主/受主混合活性层(P3HT:PCBM)。伏安氧化/还原ZnO / ITO触点上纯P3HT薄膜表明,ZnO薄膜中存在针孔通路,允许暗氧化(将ITO空穴注入P3HT)。然而,在P3HT:PCBM活性层中,P3HT氧化的电化学活性大大减弱,这表明PCBM在ZnO界面附近富集,有效阻止了P3HT与ITO接触的相互作用。从全P3HT / PCBM OPV中的暗电流电压行为获得的分流电阻取决于(i)sg-ZnO或sp-ZnO膜的孔隙率(如探针分子电化学所揭示)和(ii) ZnO / P3HT:PCBM_界面上PCBM的富集,通过电化学表征可以方便地揭示两种作用。我们预期这些方法将适用于“可印刷”太阳能电池的溶液处理中间层的更广泛的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号