Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

摘要

We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of similar to 500 nm with a maximum photosensitivity of similar to 10(6) and a responsivity value of up to 2 X 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 degrees C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.