Polyethylenimine (PEI) As an Effective Dopant To Conveniently Convert Ambipolar and p-Type Polymers into Unipolar n-Type Polymers

摘要

In this study, we added a small amount of polyethylenimine (PEI) into several ambipolar and p-type polymer semiconductors and used these blends as channel materials in organic thin film transistors (OTFTs). It is found that PEI can effectively suppress hole transport characteristics while maintaining or promoting the electron transport performance. Unipolar n-channel OTFTs with electron-only transport behavior is achieved for all the polymer semiconductors chosen with 2-10 wt % PEI. The electron-rich nitrogen atoms in PEI are thought to fill the electron traps, raise the Fermi level and function as trapping sites for holes, leading to promotion of electron transport and suppression of hole transport. This work demonstrates a convenient general approach to transforming ambipolar and p-type polymer semiconductors into unipolar n-type polymer semiconductors that are useful for printed logic circuits and many other applications.