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Molecular Composition, Grafting Density and Film Area Affect the Swelling-Induced Au-S Bond Breakage

机译:分子组成,接枝密度和膜面积影响溶胀诱导的Au-S键断裂

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In previous studies, we reported the first observation of the Au—S bond breakage induced mechanically by the swelling of the surface-tethered weak polyelectrolyte brushes in phosphate buffered saline (PBS), a phenomenon with broad applications in the fields of biosensors and functional surfaces. In this study, three factors, namely the molecular composition, grafting density and film area of the weak polyelectrolyte, carboxylated poly(oligo(efhylene glycol) methacrylate-random-2-hydroxyethyl methacrylate) (poly(OEGMA-r-HEMA)), were studied systematically on how they affected the swelling-induced Au-S bond breakage (ABB). The results showed that, first, the swelling-induced ABB is applicable to a range of molecular compositions and grafting densities; but the critical thickness (T_(critica,dry)) varied with both of the two factors. An analysis on the swelling ratio further revealed that the difference in the T_(critical,dry) arose from the difference in the swelling ability. A film needed to swell to ~250 nm to induce ABB regardless of its composition or structure, thus a higher swelling ratio would lead to a lower T_(critical,dry) value. Then, the impact of the film area was studied in micrometer-and sub-micrometer-scale brush patterns, which showed that only partial, rather than complete ABB was induced in these microscopic films, resulting in buckling instead of film detaching. These results demonstrated that the ABB is suitable to be used in the design of biosensors, stimulus-responsive materials and mechanochemical devices. Although the >160 μm~2 required area for uniform ABB hinders the application of ABB in nanolithography, the irreversible buckling provides a facile method of generating rough surfaces.
机译:在先前的研究中,我们首次报道了由表面束缚的弱聚电解质刷在磷酸盐缓冲盐水(PBS)中溶胀而机械诱导的Au-S键断裂的现象,这种现象在生物传感器和功能表面领域得到广泛应用。在这项研究中,三个因素,即弱聚电解质的分子组成,接枝密度和膜面积,羧化聚(低聚(戊二醇)甲基丙烯酸酯-无规-2-甲基丙烯酸羟乙酯)(poly(OEGMA-r-HEMA)),对它们如何影响溶胀诱导的Au-S键断裂(ABB)进行了系统的研究。结果表明,首先,溶胀诱导的ABB适用于各种分子组成和接枝密度。但是临界厚度(T_(critica,dry))随两个因素而变化。对溶胀率的分析进一步表明,T_(临界,干)的差异是由溶胀能力的差异引起的。无论其成分或结构如何,都需要溶胀至约250 nm才能诱导ABB的薄膜,因此较高的溶胀率将导致较低的T_(临界,干)值。然后,在微米级和亚微米级的刷子图案中研究了薄膜区域的影响,结果表明,在这些微观薄膜中仅诱发了部分ABB而不是完全的ABB,从而导致屈曲而不是薄膜脱离。这些结果表明,ABB适合用于生物传感器,刺激响应材料和机械化学设备的设计。尽管均匀ABB所需的面积> 160μm〜2妨碍了ABB在纳米光刻中的应用,但不可逆屈曲提供了一种生成粗糙表面的简便方法。

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