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首页> 外文期刊>Contributions to Mineralogy and Petrology >Silicon and oxygen self diffusion in enstatite polycrystals: the Milke et al. (2001) rim growth experiments revisited
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Silicon and oxygen self diffusion in enstatite polycrystals: the Milke et al. (2001) rim growth experiments revisited

机译:硅和氧在顽辉石多晶体中的自扩散:米尔克等人。 (2001)重新研究轮辋生长实验

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摘要

Milke et al. (Contrib Mineral Petrol 142:15-26, 2001) studied the diffusion of Si, Mg and O in synthetic polycrystalline enstatite reaction rims. The reaction rims were grown at 1,000 deg C and 1 GPa at the contacts between forsterite grains with normal isotopic compositions and a quartz matrix extremely enriched in ~(18)O and ~(29)Si. The enstatite reaction rim grew from the original quartz-forsterite interface in both directions producing an inner portion, which replaced forsterite and an outer portion, which replaced quartz. Here we present new support for this statement, as the two portions of the rim are clearly distinguished based on crystal orientation mapping using electron backscatter diffraction (EBSD). Milke et al. (Contrib Mineral Petrol 142:15-26, 2001) used the formalism of LeClaire (J Appl Phys 14:351- 356, 1963) to derive the coefficient of silicon grain boundary diffusion from stable isotope profiles across the reaction rims. LeClaire's formalism is designed for grain boundary tracer diffusion into an infinite half space with fixed geometry. A fixed geometry is an undesired limitation in the context of rim growth. We suggest' an alternative model, which accounts for simultaneous layer growth and superimposed silicon and oxygen self diffusion. The effective silicon bulk diffusivity obtained from our model is approximately equal within both portions of the enstatite reaction rim: D_(si,En~(eff))=1.0-4.3Xl0~(-16)m~2 s~(-1). The effective oxygen diffusion is relatively slow in the inner portion of the reaction rim, D_(O,En~(eff))=0.8-1.4Xl0~(-16) m~2 s~(-1), and comparatively fast, D_(O,En~(eff))=5.9-11.6Xl0~(-16) m~2 s~(-1), in its outer portion. Microstructural evidence suggests that transient porosity and small amounts of fluid were concentrated at the quartz-enstatite interface during rim growth. This leads us to suspect that the presence of an aqueous fluid accelerated oxygen diffusion in the outer portion of the reaction rim. In contrast, silica diffusion does not appear to have been affected by the spatial variation in the availability of an aqueous fluid.
机译:米尔克等。 (Contrib Mineral Petrol 142:15-26,2001)研究了Si,Mg和O在合成多晶顽辉石反应边缘中的扩散。反应边缘在具有正常同位素组成的镁橄榄石晶粒与极富~~(18)O和〜(29)Si的石英基质之间的接触点处,在1000摄氏度和1 GPa的条件下生长。顽辉石反应边缘从原始的石英-镁橄榄石界面沿两个方向生长,产生了内部部分(代替了镁橄榄石)和外部部分(代替了石英)。在这里,我们为这一说法提供了新的支持,因为根据使用电子背散射衍射(EBSD)的晶体取向映射,可以清楚地区分轮辋的两个部分。米尔克等。 (Contrib Mineral Petrol 142:15-26,2001)使用LeClaire(J Appl Phys 14:351-356,1963)的形式来从整个反应边缘的稳定同位素分布推导硅晶粒边界扩散的系数。 LeClaire的形式主义旨在将晶界示踪剂扩散到具有固定几何形状的无限半空间中。在轮辋生长的情况下,固定的几何形状是不希望的限制。我们建议使用另一种模型,该模型考虑了同时层生长以及硅和氧的自扩散叠加。从我们的模型获得的有效硅体积扩散率在顽辉石反应边缘的两个部分内大致相等:D_(si,En〜(eff))= 1.0-4.3Xl0〜(-16)m〜2 s〜(-1) 。有效氧扩散在反应边缘的内部相对较慢,D_(O,En〜(eff))= 0.8-1.4X10〜(-16)m〜2 s〜(-1),并且相对较快, D_(O,En〜(eff))= 5.9-11.6X10〜(-16)m〜2 s〜(-1)。微观结构证据表明,在边缘生长过程中,瞬时孔隙和少量流体集中在石英-顽辉石界面。这使我们怀疑水性流体的存在会加速反应边缘外部的氧扩散。相反,二氧化硅的扩散似乎不受水性流体可用性的空间变化的影响。

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