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Anisotropic charge injection and transport in the cross stacking crystal of distyrylbenzene derivative and a possible new device structure

机译:二苯乙烯基苯衍生物的交叉堆积晶体中的各向异性电荷注入和传输以及可能的新器件结构

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摘要

Anisotropic charge transport in organic materials is currently receiving increasing attention. Extraordinary anisotropic hole and electron transport with nearly balanced mobility are predicted computationally for the first time in the cross stacking crystal of trans-2,5-diphenyl-1,4-distyrylbenzene (trans-DPDSB). The hole and electron transports are along the crystallographic c and b axes, respectively. Based on the transport property, a possible novel device structure is proposed to perform the three-dimensional (3D) carrier recombination, which enables the tunable hole and electron injection from different crystal planes. Meanwhile, the hole and electron transport along their own independent transport channels with the largest mobility.
机译:目前,有机材料中的各向异性电荷传输受到越来越多的关注。反式-2,5-二苯基-1,4-二苯乙烯基苯(trans-DPDSB)的交叉堆积晶体中首次计算出了具有几乎平衡迁移率的异常各向异性空穴和电子传输。空穴和电子传输分别沿晶体学c和b轴。基于传输特性,提出了一种可能的新型器件结构来进行三维(3D)载流子复合,从而实现了可调谐的空穴和来自不同晶面的电子注入。同时,空穴和电子沿着它们自己的具有最大迁移率的独立传输通道传输。

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