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First-principles study of the hydrogen doping influence on the geometric and electronic structures of N-doped TiO2

机译:氢掺杂对N掺杂TiO2的几何和电子结构影响的第一性原理研究

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摘要

We employed DFT calculations to study the geometric and electronic structures of N- and NH-doped anatase TiO2 systems. With N dopant concentrations of 2.1% and 1.0%, the substitutional NH-doping resulted in bandgap narrowings of 0.12 and 0.13 eV, respectively, very close to that resulted from substitutional N- doping (0.12 and 0.11 eV). For interstitial N- and NH-doping with a nitrogen concentration of 2.1%, only NH-doping resulted in a bandgap narrowing of 0.07 eV. For both substitutional and interstitial NH-doping con. gurations, the crystalline structure adjacent to the NH dopants was heavily distorted, which might enhance the photocatalytic efficiency.
机译:我们采用DFT计算来研究N和NH掺杂的锐钛矿型TiO2系统的几何和电子结构。在氮掺杂剂浓度为2.1%和1.0%的情况下,替代性NH掺杂导致的带隙变窄分别为0.12和0.13 eV,非常接近于替代性N掺杂(0.12和0.11 eV)。对于氮浓度为2.1%的间隙N和NH掺杂,只有NH掺杂会导致带隙变窄0.07 eV。对于取代的和填隙的NH掺杂con。因此,与NH掺杂剂相邻的晶体结构严重扭曲,这可能会提高光催化效率。

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