首页> 外文期刊>Chemistry: A European journal >Poly(N-vinylpyrrolidone)-Decorated Reduced Graphene Oxide with ZnO Grown In Situ as a Cathode Buffer Layer for Polymer Solar Cells
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Poly(N-vinylpyrrolidone)-Decorated Reduced Graphene Oxide with ZnO Grown In Situ as a Cathode Buffer Layer for Polymer Solar Cells

机译:聚(N-乙烯基吡咯烷酮)修饰的氧化锌还原原位生长的ZnO作为聚合物太阳能电池的阴极缓冲层

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摘要

A ZnO@reduced graphene oxide-poly(N-vinyl-pyrrolidone) (ZnO@RGO-PVP) nanocomposite, prepared by in situ growth of ZnO nanoparticles on PVP-decorated RGO (RGO-PVP) was developed as a cathode buffer layer for improving the performance of polymer solar cells (PSCs). PVP not only favors homogeneous distribution of the RGO through the strong pi-pi interactions between graphene and PVP molecules, but also acts as a stabilizer and bridge to control the in situ growth of sol-gel-derived ZnO nanoparticles on the surface of the graphene. At the same time, RGO provides a conductive connection for independent dispersion of ZnO nanoparticles to form uniform nanoclusters with fewer domain boundaries and surface traps. Moreover, the LUMO level of ZnO is effectively improved by modification with RGO-PVP. Compared to bare ZnO, a ZnO@RGO-PVP cathode buffer layer substantially reduces the recombination of carriers, increases the electrical conductivity, and enhances electron extraction. Consequently, the power conversion efficiency of an inverted device based on thieno[3,4-b]thiophene/benzodithiophene (PTB7):[6,6]-phenyl C-71-butyric acid methyl ester (PC71BM) with ZnO@RGO-PVP as cathode buffer layer was greatly improved to 7.5% with improved long-term stability. The results reveal that ZnO@RGO-PVP is universally applicable as a cathode buffer layer for improving the performance of PSCs.
机译:通过在PVP装饰的RGO(RGO-PVP)上原位生长ZnO纳米颗粒制备的ZnO还原氧化石墨烯-聚(N-乙烯基-吡咯烷酮)(ZnO @ RGO-PVP)纳米复合材料被用作阴极缓冲层改善聚合物太阳能电池(PSC)的性能。 PVP不​​仅通过石墨烯与PVP分子之间的强pi-pi相互作用促进RGO的均匀分布,而且还充当稳定剂和桥梁,以控制溶胶-凝胶衍生的ZnO纳米粒子在石墨烯表面上的原位生长。 。同时,RGO为ZnO纳米粒子的独立分散提供了导电连接,从而形成了具有较少畴边界和表面陷阱的均匀纳米簇。此外,通过用RGO-PVP改性可以有效地提高ZnO的LUMO含量。与裸露的ZnO相比,ZnO @ RGO-PVP阴极缓冲层显着减少了载流子的复合,增加了电导率,并增强了电子提取。因此,基于噻吩[3,4-b]噻吩/苯并二噻吩(PTB7):[6,6]-苯基C-71-丁酸甲酯(PC71BM)和ZnO @ RGO-的逆变器的功率转换效率用作阴极缓冲层的PVP大大提高到了7.5%,具有改善的长期稳定性。结果表明,ZnO @ RGO-PVP可普遍用作改善PSCs性能的阴极缓冲层。

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