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Hollow Boron Nitride (BN)Nanocages and BN-Nanocage-Encapsulated Nanocrystals

机译:空心氮化硼(BN)纳米笼和BN纳米笼罩的纳米晶体

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摘要

Hollow boron nitride (BN)nanocages (nanospheres,image on the left)and BN-nanocage-encapsulated GaN nanocrystals (right)have been synthesized by using a homemade B- N-O precursors.The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm.The nanocages have crystalline structures.Peanutlike nanocages with double walls have also been observed;their internal space is divided into seperated compartments by the internal walls.The method is extended to sheathe nanocrystals with BN nanocages;BN-shell/GaN-core nanostructures have been successfully fabriacted.The method may be generally applicable to the fabrication BN-sheathed nanocrystals.
机译:使用自制的B-NO前驱体合成了空心氮化硼(BN)纳米晶(纳米球,左图)和BN纳米包封的GaN纳米晶体(右)。制备的BN空心纳米笼具有典型的球形形态,具有直径在30至200 nm之间。纳米笼具有晶体结构。壳/ GaN核纳米结构已被成功制造。该方法通常可用于制造BN护套纳米晶体。

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