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Several millimeters long SiC-SiOx nanowires synthesized by carbon black and silica sol

机译:由炭黑和硅溶胶合成的几毫米长的SiC-SiOx纳米线

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Several millimeters long SiC-SiOx nanowires with the diameters of 50-300 nm were successfully synthesized by carbothermal reduction using the raw materials of carbon black, silica sol and alumina at 1400 degrees C. The morphology and microstructure of nanowires have been studied in detail by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron energy scattering (EDX), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The nanowires were mainly in a straight wire-like morphology and consisted of 3C-SiC. Alumina played an important role in regulating the content of SiO2 in the reaction to produce SiO and keep nanowires subsequently growth along one-dimensional direction, and then an alumina-assisted growth of vapor-solid (VS) mechanism was proposed for the growth mechanism of several millimeters long SiC-SiOx nanowires. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:以炭黑,硅溶胶和氧化铝为原料,在1400℃下通过碳热还原法成功地合成了直径为50-300 nm的几毫米长的SiC-SiOx纳米线。 X射线衍射(XRD),扫描电子显微镜(SEM),电子能量散射(EDX),傅里叶变换红外光谱(FTIR),透射电子显微镜(TEM)和高分辨率透射电子显微镜(HRTEM)。纳米线主要呈直线状,由3C-SiC组成。氧化铝在调节反应中的SiO2含量方面起着重要作用,以生产SiO并保持纳米线随后沿一维方向生长,然后提出了氧化铝辅助的气固(VS)机理的生长机理。几毫米长的SiC-SiOx纳米线。 (C)2015 Elsevier Ltd和Techna Group S.r.l.版权所有。

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