High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors

摘要

PRAM integration technologies using 3-D cell array transistor were proposed to realize the reliable high density 256Mb PRAM (Phase Change RAM) product. Introducing the 3-D cell array transistor, sufficient programming current with the good scalability and reliability was obtained. The cost effectiveness, reliability and performance in the product level will be reviewed.