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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >Theoretical simulation on the excited state properties: Effect of lanthanide ion dopant in yttrium oxide and yttrium oxy-sulphide
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Theoretical simulation on the excited state properties: Effect of lanthanide ion dopant in yttrium oxide and yttrium oxy-sulphide

机译:激发态性质的理论模拟:镧系元素离子掺杂剂对氧化钇和氧化钇钇的影响

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Recently, lanthanide ion doped yttrium oxide (Y{sub}2O{sub}3) compounds have been attracting attention in applications concerning opto-electronic materials such as laser devices and field-emission displays. Consequently study on the excited state of lanthanide ion doped yttrium oxide is of major significance. In the present work we report studies performed on the electronic excited states of pure, Eu{sup}(3+) and Er{sup}(3+) doped Y{sub}2O{sub}3 as well as Y{sub}2O{sub}2S clusters using time dependent density functional theory method to unveil the influence of lanthanide ion in yttrium oxide compounds.
机译:近来,镧系元素离子掺杂的氧化钇(Y {sub} 2O {sub} 3)化合物在涉及光电材料的应用中引起了人们的关注,例如激光设备和场发射显示器。因此,研究镧系元素掺杂氧化钇的激发态具有重要意义。在当前的工作中,我们报告了对纯掺杂Eu {sup}(3+)和Er {sup}(3+)的Y {sub} 2O {sub} 3以及Y {sub}的电子激发态进行的研究。利用时变密度泛函理论方法研究了2O {sub} 2S团簇,揭示了镧系元素对氧化钇化合物的影响。

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