Fabrication of SON (silicon on nothing)-MOSFET and its ULSI applications

摘要

A practical method for the formation of silicon on nothing (SON) structure with a desired size and shape has been developed, which is named as the empty space in silicon (ESS) technique. The concept of ESS technique and properties of SON structure fabricated by ESS technique are presented SON-MOSFET was successfully fabricated for the first time by using ESS technique as an alternative of SOI-MOSFET. Advantage of SON structure was experimentally demonstrated SON structure formed by ESS technique is appropriate for System on a Chip (SoC) applications, such as embedded trench DRAMs and digital-analog mixed devices, due to the merit that SON structure can be fabricated partially on bulk substrate.