A novel meshing scheme for numerical simulation of semiconductor process and device with arbitrary topography

摘要

We report a scheme of mesh generation from an arbitrary topography for semiconductor process and device simulation. A 3D complex structure is generated by the topography simulation based on the cell method. To translate from the planaron-planar resulting structure into mesh structure, a novel approach is proposed by using the extraction of surface information, followed by generating 3D mesh with advancing front method (AFM). For the numerical simulation to calculating capacitances, finite element method (FEM) is employed. In this paper, this scheme is presented and verified with applications to the 4 conductors of 2μm width with non-planar surface as an example.