SYSTEM AND METHOD OF TOPOGRAPHY SIMULATION FOR NUMERICAL SEMICONDUCTOR PROCESS ANALYSIS

摘要

PURPOSE: A method for simulating a topography for a numerical analysis in a semiconductor process is provided to predict a topographical change of a semiconductor substrate during a manufacturing process, by a computer simulation test. CONSTITUTION: A topographical simulation system(100) comprises an arranged data structure(110), a surface cell list(120) and a cell information changing module(130). The arranged data structure stores an integer exhibiting a material by its information, and controls cells forming divided simulation areas composed of quadrilateral or hexahedron cells. Rate information exhibits a second dimensional or a third dimensional arrangement number of a surface cell forming the divided area, an etch rate or an evaporation rate. Exposure information exhibits a state of another surface cell adjacent to the surface cell. Volume information is differently established depending on the kinds of the material. Spillover information corrects an error. The surface cell list stores either one of the information or a composition thereof, and has a linked list data structure to control the surface cells. The cell information changing module changes information of each cell forming the surface cell list according to the etch rate or evaporation rate.