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首页> 外文期刊>Biophysics >Model of Ion Diffusion in Synaptic Cleft Based on Stochastical Integration of Langevin Equation at Dielectric Friction Approximation
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Model of Ion Diffusion in Synaptic Cleft Based on Stochastical Integration of Langevin Equation at Dielectric Friction Approximation

机译:基于介电摩擦逼近的Langevin方程的随机积分的突触间隙离子扩散模型

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摘要

Changes in the state of the central nervous system, leading to the development of pathological processes, directly are associated with a state of neurons, particularly with their conductivity in synaptic cleft region. The synaptic flexibility plays a key role in environmental adaptation, which manifests in dynamic changes of synaptic properties. However more attention was paid rather to their functional, than physical-chemical properties. We present the results of simulation of potential determining ions in synaptic contact area using Langevin dynamics. Diffusion and self-diffusion coefficients were calculated. It is shown that the range of variability of the diffusion coefficient of ions in perimembrane space, caused by variable viscosity and dielectric conductivity of electrolyte can reach 20%. These physical-chemical synaptic parameters can be considered as relevant for synaptic flexibility.
机译:中枢神经系统状态的改变,导致病理过程的发展,直接与神经元的状态有关,特别是与它们在突触裂隙区的传导性有关。突触的柔韧性在环境适应中起着关键作用,这表现为突触特性的动态变化。但是,更多地关注其功能而不是物理化学性质。我们介绍了使用兰格文动力学在突触接触区域中潜在确定离子的模拟结果。计算扩散系数和自扩散系数。结果表明,由于电解质的黏度和介电常数的变化而引起的离子在膜间空间的扩散系数的变化范围可以达到20%。这些物理化学突触参数可以被认为与突触灵活性有关。

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