首页> 外文期刊>日本応用磁気学会誌 >Variation of the Magnetic Domain and GMI Property of a HFC-Type Magnetic Field Sensor with Inclined Domain Walls Resulting from the Application of an External Magnetic Field in the Measurement Direction
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Variation of the Magnetic Domain and GMI Property of a HFC-Type Magnetic Field Sensor with Inclined Domain Walls Resulting from the Application of an External Magnetic Field in the Measurement Direction

机译:在测量方向上施加外部磁场导致具有倾斜畴壁的HFC型磁场传感器的磁畴和GMI特性变化

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摘要

A change in the magnetic domain structure of a high-frequency carrier-type (HFC-type) thin-film magnetic field sensor (or giant magnetoimpedance, GMI, sensor) with inclined ladder-line magnetic domain walls was investigated as a function of an external magnetic field. The GMI property of the same sensor element was also investigated. Comparison of these data leads to the following results: The application of an external magnetic field causes a drastic change in the domain structure, from an inclined ladder-line to a single domain on a threshold magnetic field. The threshold field is different for increasing and decreasing magnetic fields. This hysteretic phenomenon is in accord with the hysteresis of the GMI property. It was investigated theoretically by using the bias susceptibility model of a single-domain magnetic thin-film with uniaxial anisotropy. This theoretical model predicts that contiguous inclined ladder-line domains on a 180 deg wall will have different values for the high-frequency permeability. An approximate estimate of the total sensor impedance obtained by adding the impedances of all the ladder-line domains shows that the hysteresis of the domain leads to the hysteresis of the GMI property. It also explains why inclined ladder-line HFC-type sensors have high sensor gain.
机译:研究了带有倾斜梯形线磁畴壁的高频载流子(HFC型)薄膜磁场传感器(或巨磁阻,GMI,传感器)的磁畴结构随磁场强度的变化。外部磁场。还研究了同一传感器元件的GMI属性。这些数据的比较得出以下结果:施加外部磁场会导致畴结构发生急剧变化,从倾斜的阶梯线到阈值磁场上的单个畴。对于增加和减少磁场,阈值场是不同的。该磁滞现象与GMI属性的磁滞一致。通过使用具有单轴各向异性的单畴磁性薄膜的磁化率模型在理论上进行了研究。该理论模型预测180度壁上的连续倾斜阶梯线域将具有不同的高频磁导率值。通过将所有阶梯线域的阻抗相加而获得的总传感器阻抗的近似估计表明,域的磁滞导致GMI属性的磁滞。这也解释了为什么倾斜的梯形线HFC型传感器具有较高的传感器增益。

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