Distribution of AL, Ti, V atoms implanted into polycrystalline copper by means of ion mixing under irradiation with polyenergetic beam of Ar ions

摘要

Near the surface layers of polycrystalline Cu werealloyed with Al, Ti and V atoms by ion mixing method underirradiation with 10 keV Ar~+ ions. An analysis of thecomposition of modified layers shows that the most efficienceway of the alloying is simultaneous implantation of Al, Ti or Ai,Ti, V atoms. Formation of Ti_3Al, TiA1_3 intermetallides innear the surface layers occurring in these cases, leads tosignificant strengthening the surface. A selective penetration of Tiatoms (<=0.001 at. percent) beneath the surface up to 1 #mu#m has been found.