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首页> 外文期刊>電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices >200MHz/200MSPS 3.2W at 1.5V Vdd, 9.4M bits Ternary CAM with New Charge Injection Match Detect Circuits and Bank Selection Scheme
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200MHz/200MSPS 3.2W at 1.5V Vdd, 9.4M bits Ternary CAM with New Charge Injection Match Detect Circuits and Bank Selection Scheme

机译:200MHz / 200MSPS 3.2W at 1.5V Vdd,9.4M bits三元CAM,带有新型电荷注入匹配检测电路和存储体选择方案

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The 9.4M bits Ternary CAM device has been designed and fabricated. The performance of 200MHz/200MSPS(million searches per second) with 3.2W at 1.5V Vdd was achieved. Two new approaches were taken to achieve this performance. One is the Charge Injection Match Detect Circuits (CIMDC) for a very small swing voltage level (about 300 mV) of a match line and stable detection of it. The other is the improved Bank Selection Scheme (BSS) with the data-storing method in order to activate only the target bank where a match data is expected to be stored. The 200 MSPS is 1.6 times faster and the 3.2W is almost 1/4 less power consumption compared with the conventional design.
机译:已经设计和制造了940万位三元CAM器件。在1.5V Vdd下具有3.2W的200MHz / 200MSPS(每秒百万次搜索)的性能。采取了两种新方法来实现此性能。一种是电荷注入匹配检测电路(CIMDC),用于匹配线的很小的摆幅电压电平(约300 mV)并对其进行稳定的检测。另一个是采用数据存储方法的改进的存储体选择方案(BSS),以便仅激活预期存储匹配数据的目标存储体。与传统设计相比,200 MSPS的速度提高了1.6倍,而3.2W的功耗却降低了近1/4。

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