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A dislocation density based constitutive law for BCC materials in crystal plasticity FEM

机译:晶体塑性有限元中BCC材料基于位错密度的本构律

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摘要

We introduce a crystal plasticity constitutive model for BCC materials which is build on dislocation movement and uses dislocation density variables as internal state variables. Besides the statistically stored dislocations geometrically necessary dislocations are used to consider nonlocal effects as recently proposed by Ma, Roters and Raabe for the FCC crystal structure. In this paper the model will be adopted to the BCC crystal structure. Due to the special core structure of screw dislocations formed at low temperatures, the mechanical behavior of BCC crystals is controlled by the movement of screw dislocations rather than edge dislocations. For this reason, the Peierls mechanism has to be considered and several modifications have been introduced which include a new scaling relation between the mobile and immobile dislocations, and new flow rules for bulk and grain boundary elements. A pure Nb bicrystal is studied experimentally and numerically under channel die compression boundary conditions, to demonstrate the applicability of the new model variant. (c) 2006 Elsevier B.V. All rights reserved.
机译:我们引入了BCC材料的晶体可塑性本构模型,该模型建立在位错运动的基础上,并使用位错密度变量作为内部状态变量。正如Ma,Rotters和Raabe最近针对FCC晶体结构提出的那样,除了统计存储的位错外,还使用几何上必要的位错来考虑非局部效应。在本文中,该模型将用于BCC晶体结构。由于在低温下形成的螺位错的特殊核心结构,BCC晶体的机械行为是由螺位错的运动而不是边缘位错控制的。因此,必须考虑使用Peierls机理,并进行了一些修改,其中包括可移动和不可移动位错之间的新比例关系,以及用于体积和晶粒边界元素的新流动规则。在通道模头压缩边界条件下,对纯Nb双晶进行了实验和数值研究,以证明新模型变体的适用性。 (c)2006 Elsevier B.V.保留所有权利。

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