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Shearing single crystal copper in molecular dynamics simulation at different temperatures

机译:不同温度下分子动力学模拟中的剪切单晶铜

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Molecular dynamics simulations using the embedded atom method (EAM) potential were carried out to study shear behaviors of single crystal copper at different temperatures. Shear tests were set in the (111) crystallographic plane along the [110] and [112] directions, respectively. The period of shear stress–shear strain curves was observed when shear was set along the [110] direction. Microtwins arose during the shear process along the [112] direction. Shear modulus obtained from the slop of shear stress–shear strain curves is on the level of 40.0 ± 1.5 GPa at 0 K and decreases with increasing temperature, and performs insensitivity to the size of shear model and shear direction. Simulation results also indicate that the EAM potential is adequate to describe the shear behaviors of single crystal copper. In addition, this work also shows that the classical description of shear modulus is still efficient at the nanoscale, which might suggest a simple and direct way to obtain shear modulus in atomic scale.
机译:使用嵌入原子方法(EAM)势进行了分子动力学模拟,以研究单晶铜在不同温度下的剪切行为。分别在(111)晶面沿[110]和[112]方向进行剪切测试。当沿[110]方向设置剪切时,观察到剪切应力-剪切应变曲线的周期。在剪切过程中,沿[112]方向出现了微孪晶。从剪切应力-剪切应变曲线的斜率获得的剪切模量在0 K时为40.0±1.5 GPa,并且随着温度的升高而降低,并且对剪切模型的大小和剪切方向不敏感。仿真结果还表明,EAM电位足以描述单晶铜的剪切行为。此外,这项工作还表明,剪切模量的经典描述在纳米级上仍然有效,这可能暗示了一种获得原子级剪切模量的简单直接的方法。

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