PHOTOTHERMOACOUSTIC EFFECT IN ION-BEAM IMPLANTED Si-BASED STRUCTURES

摘要

We present the results of investigations of the photothermoaccmstic (PTA) effect in ion-beam implanted silicon-based structures. The factors, which influence the PTA-transforrnation and, hence, the image contrast formation in the PTA-microscopic studies of these structures, are established. The conclusion is drawn that significant changes of the PTA contrast are related to the spatial distribution of elastic stresses arising during implantation.