Process for fabricating adjustment marks, calibration structures and measuring structures in the sub- mu m region for electron-beam and ion-beam scribing and measuring technology

摘要

For the purpose of fabricating adjustment marks and calibration structures in the sub- mu m region, a material having a high relative atomic mass (100) in a thin layer (4) is used, which is patterned on an electrically conductive layer of material (3) having a low relative atomic mass (50) by dry etching by means of a masking layer (5) consisting of an electron beam-sensitive resist. The layer sequence (4, 3) preferably comprises the combination gold and aluminium and is applied to a polyimide or photoresist layer (2). By combining a thin layer (4) which exhibits high electron back-scattering, on substrates (3) which exhibit low back-scattering, marks can be fabricated for electron-beam scribing and measuring technology which have fine structures down to the range of the probe diameter (1/10 mu m) at a signal-to-noise ratio of 2:1. By means of direct ion-beam scribing, the gold layer can alternatively be patterned directly, without the circuitous formation of a resist. IMAGE