Methodical Aspects of Formation of Two-Component Materials with Usage of Implantation-Stimulative Technology

摘要

The computer and experimental simulations of ion beam-assisted deposition of Cr films are carried out simultaneously with 15 and 30 keV N-ion bombardment. The constancy of transport ratio of the number of deposited atoms to the number of injected ions can be obtained for different ion energy and rate of Cr deposition. The resistivity method for the deposition-rate control is used. As shown, the N ion irradiation stimulates the grain-nucleation increasing and their average-size decreasing