THERMAL CORRECTION TO RESISTIVITY IN DILUTE Si-MOSFET TWO-DIMENSIONAL SYSTEMS

摘要

Neglecting electron-electron interactions and quantum interference effects. we calculate the classicla resistivity of a two-dimewnsional electron (hole) gas taking the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects intlo accout. The resistivity is found to be a universal function of the temperature,expressed in the units of (h / e~2)(kF~l)~-1. Analysis of the compressibility and thermopower points ot the thermodynamic nature of the metal-insulator transition in two-dimensional systems.