Thermal correction to resistivity in dilute Si-MOSFET two-dimensional systems

摘要

Neglecting electron-electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be a universal function of the temperature, expressed in units of (h/e(2))(k(F)l)(-1). Analysis of the compressibility and thermopower points to the thermodynamic nature of the metal-insulator transition in two-dimensional systems. We reproduce the beating pattern of Shubnikov-de Haas oscillations in both the crossed field configuration and Si-MOSFET valley splitting cases. The consequences of the integer quantum Hall effect in a dilute Si-MOSFET two-dimensional electron gas are discussed. The giant parallel magnetoresistivity is argued to result from the magnetic-field-driven disorder. (C) 2005 Pleiades Publishing, Inc.