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首页> 外文期刊>Computational & theoretical chemistry >Does electron density in bond critical point reflect the formal charge distribution in H-bridges? The case of charge-assisted hydrogen bonds (CAHBs)
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Does electron density in bond critical point reflect the formal charge distribution in H-bridges? The case of charge-assisted hydrogen bonds (CAHBs)

机译:键临界点的电子密度是否反映了H桥的形式电荷分布?电荷辅助氢键(CAHBs)的情况

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摘要

The charge-assisted hydrogen bond (CAHB) was investigated for a set of H-bridges of N-H...Cl type. The properties of these bonds, i.e. interaction energy and electron density measured in a specific point of the bond, were represented as functions of H...Cl distance. It appears that the energy of interaction is very strongly affected by formal charges, which may be explained by the presence of efficient interaction between formal ions. Surprisingly, the electron density measured in the H-bond critical point is totally independent of the formal charges. For the given H...Cl distance the [rho]BCP value is the same, no matter whether neutral molecules or oppositely charged ions interact with each other.
机译:研究了一组N-H ... Cl型H桥的电荷辅助氢键(CAHB)。这些键的性质,即在键的特定点测得的相互作用能和电子密度,表示为H ... Cl距离的函数。似乎相互作用的能量受到形式电荷的强烈影响,这可以用形式离子之间有效相互作用的存在来解释。出乎意料的是,在H键临界点测得的电子密度完全不依赖于形式电荷。对于给定的H ... Cl距离,无论中性分子或带相反电荷的离子彼此相互作用,ρBCP值都是相同的。

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