レーザー学会産業賞を受賞して-GaN系半導体レーザーの現状と応用ー

摘要

15 years have passed since the pulsed operation of InGaN based Laser Diode at 405 nm at room temperature was reported in 1995. Meanwhile, the output power of the laser diode at 405 nm becomes from 5 mW (CW) to 320 mW (pulse) until now and will exceed 420 mW (pulse). On the other hand, the range of the operating wavelength of the laser diode has expanded from 375 nm to 488 nm on a commercial basis. In recent years, finally the optical data storage market with the laser diode started to launch rapidly. Industrial market requires unique wavelength for their many applications. The laser diodes have been supporting for the market with the range of the wavelength. The projection display market is expected with using RGB lasers or lasers with the combination of phosphor.