High-speed, low-power SOI technology

摘要

In recent years, there has been increasing demand for the realization of a high-speed, low power system LSI with silicon-on-insulator (SOI) technology. To meet this requirement, we have developed a novel device/circuit technology for SOI devices.Our newly developed device design and body bias control method enables power dissipation to be reduced to 1/100 without sacrificing the operating speed. Using a novel SOI lateral bipolar junction transistor, low-power, high-speed characteristics for aradio-frequency analog LSI can be achieved.