High Pressure Annealing System (HPA)

摘要

A High Pressure Anneal System (HPA) was developed as a new device for the preparation of the Thin Film Transistor (TFT), which is a component of the Liquid Crystal Display (LCD). The oxidation rate of polycrystalline silicon (p-Si) increases in proportion to the oxidant pressure, and the defect density in p-Si films decreases in the oxidation process. The process temperature of the high pressure oxidation is lower than the conventional method (about 1 000 deg C). The defect density of p-Si film decreased and the Hall mobility of the p-Si film increased after high pressure oxidation for about one hour.