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首页> 外文期刊>Colloids and Surfaces, A. Physicochemical and Engineering Aspects >Characteristics of white OLED using Zn(phen) as a yellowish green emitting layer and BCP as a hole blocking layer
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Characteristics of white OLED using Zn(phen) as a yellowish green emitting layer and BCP as a hole blocking layer

机译:使用Zn(phen)作为淡绿色发光层和BCP作为空穴阻挡层的白色OLED的特性

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摘要

We synthesized the emissive material [(1,10-phenanthroline)(8-hydroxyqui-noline)] also known as Zn(phen)q. We studied white OLED using Zn(phen)q as a yellowish green emitting layer, N/N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4-diamine (NPB) as a hole transporting layer and blue emitting layer, and varying thicknesses of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a hole blocking layer. The fundamental structures of the OLED were ITO/NPB (40 nm)/BCP/Zn(phen)q (50 nm)/LiF/Al. We varied the thickness of the BCP layer from 0 to 5 to 10 nm. When the thickness of the BCP layer was 5 nm, white emission was achieved. We obtained a maximum luminance of 5400 cd/m(2) at a current density of 650 mA/cm(2).
机译:我们合成了发光材料[(1,10-phenothroline)(8-hydroxyqui-noline)],也称为Zn(phen)q。我们研究了使用Zn(phen)q作为淡绿色发光层,N / N'-双(1-萘基)-N,N'-联苯-1,1'-联苯-4,4-二胺(NPB)的白色OLED )作为空穴传输层和蓝色发射层,并改变厚度的2,9-二甲基-4,7-二苯基-1,10-菲咯啉(BCP)作为空穴阻挡层。 OLED的基本结构是ITO / NPB(40 nm)/ BCP / Zn(phen)q(50 nm)/ LiF / Al。我们将BCP层的厚度从0更改为5到10 nm。当BCP层的厚度为5nm时,实现了白色发射。我们在650 mA / cm(2)的电流密度下获得了5400 cd / m(2)的最大亮度。

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