Optimization of Mechanical and Electrical Properties of TIN/Si3N4 Material by Agglomerates-Microstructure-Control (Part 2) Agglomerate Size Effect

摘要

Agglomerates of S13N4 and TiN were co-sintered to fabricate aTIN/Si3N4 ceramic displayed a duplex microstructure. The agglomerates-microstructure-controlled material (A) showed electrical conductivity at a lowerTiN content (9.8 vol%) than the theoretical value of a material with anonuniform microstructure. This is because the ratio of R_TIN (radius of TiNagglomerates) to R_SN (radius of Si_3N4 agglomerates) was 8, causing TiNagglomerates to be arranged around large Si3N4 agglomerates. It is concluded thatthe lower critical volume % for conductivity of this material resulted from theformation of a network of TiN spherical agglomerates with a smaller amount ofadditive.