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Microwave Surface Resistance in 123 superconducting Thin Films

机译:123种超导薄膜的微波表面电阻

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摘要

The microwave surface resistance, Rs, in various 123 superconducting thin films, in situ grown by pulsed laser deposition technique on different substrates was examined. Thermal annealing of MgO substrates prior to film deposition yields YBa_2Cu_3Q_z (YBCO) films with low Rs value, ~ 0.3 mO at 30 K, 22 GHz, which is close to the Rs value reported for best YBCO films which is attributed to the improved crystallinity of YBCO films. For Y_(0.98)Ca_(0.02)Ba_2Cu_3O_z films grown on MgO, we observed much suppressed Rs value (0.1 mO at 20 K, 22 GHz), which is three times smaller as compared to the Rs value of YBCO. It is presumed to be due to the enhanced Jc in this film caused by Ca doping. R_S(T) data of under-doped (both Co substituted YBCO as well as O2 depleted YBCO films grown on LaAlO3) films reveal that in general, under-doping leads to an enhancement in residual Rs values, which may be attributed to the increased penetration depth, X, caused by the suppressed carrier content in the under-doped films. In the case of rare earth mixed (Dy_(0.4)Ho_(0.6))Ba_2Cu_3O_z films grown on LaAlO_3, at 77 K and above, they exhibit a lower Rs value when compared to YBCO film. However, below 70 K, YBCO films showed a superior microwave properties.
机译:研究了通过脉冲激光沉积技术在不同基板上原位生长的各种123种超导薄膜中的微波表面电阻Rs。在膜沉积之前对MgO基板进行热退火,得到的YBa_2Cu_3Q_z(YBCO)膜具有较低的Rs值,在30 K,22 GHz下约为0.3 mO,接近于报道的最佳YBCO膜的Rs值,这归因于结晶度的提高。 YBCO电影。对于在MgO上生长的Y_(0.98)Ca_(0.02)Ba_2Cu_3O_z膜,我们观察到了受抑制的Rs值(在20 K,22 GHz时为0.1 mO),比YBCO的Rs值小三倍。推测这是由于Ca掺杂引起的该膜中Jc的增强。掺杂不足(在LaAlO3上生长的Co取代的YBCO薄膜和生长在O2上的O2耗尽的YBCO薄膜)的R_S(T)数据表明,通常,掺杂不足会导致残留Rs值增加,这可能是由于增加了渗透深度X是由掺杂不足的薄膜中载流子含量降低所引起的。在LaAlO_3上以77 K和更高的温度生长的稀土混合(Dy_(0.4)Ho_(0.6))Ba_2Cu_3O_z薄膜,与YBCO薄膜相比,它们的Rs值较低。然而,在70 K以下,YBCO膜显示出优异的微波性能。

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