首页> 外文期刊>Collection of Czechoslovak Chemical Communications >X-RAY PHOTOELECTRON SPECTROSCOPIC (XPS) STUDIES OF CLEAN AND ION BEAM BOMBARDED SB2TE2SE AND (BI0.7SB0.3)(2)SE-3.0 (111) SURFACES
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X-RAY PHOTOELECTRON SPECTROSCOPIC (XPS) STUDIES OF CLEAN AND ION BEAM BOMBARDED SB2TE2SE AND (BI0.7SB0.3)(2)SE-3.0 (111) SURFACES

机译:清洁和离子束轰击的SB2TE2SE和(BI0.7SB0.3)(2)SE-3.0(111)表面的X射线光电子能谱(XPS)研究

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The first detailed study of photoelectron spectra of Sb2Te2Se and (Bi0.7Sb0.3)(2)Se-3 (111) clean and sputtered surfaces is presented as part of an XPS examination of the surface chemistry of these and related materials. The core level binding energies and surface chemical composition have been determined from the XPS data. On substitution of Te by Se in Sb2Te3 leading to Sb2Te2Se the core level binding energies in Sb and Te increase by 0.3 eV while in Bi2Se3 the binding energy of core electrons does not change on replacement of Bi by Sb. The measured core level shifts are caused by changes of the initial state charge distribution and result in increase of average ionicity of bonding in the Sb2Te2Se crystal. The surface composition of Sb2Te2Se sample calculated from intensities of photoelectron spectra agrees well with the bulk composition of the crystal while (Bi0.7Sb0.3)(2)Se-3 sample shows enrichment in Bi. The effect of argon ion bombardment on surface composition for various impact conditions has been investigated. The surface enrichment in Sb and Bi for Sb2Te2Se and (Bi0.7Sb0.3))(2)Se-3 sample due to different atomic sputtering yields is observed. It follows from the relative intensities of photoelectron spectra measured at different detection angles that the ordered arrangement of the superficial layers sampled by the XPS method is damaged by sputtering at ion energies as low as 200 eV and doses I > 2. 10(15) ion/cm(2). [References: 24]
机译:作为对这些及相关材料表面化学的XPS检查的一部分,首次对Sb2Te2Se和(Bi0.7Sb0.3)(2)Se-3(111)清洁和溅射的表面的电子光谱进行了详细研究。核心水平的结合能和表面化学组成已由XPS数据确定。在由Sb2Te3中的Se取代Te导致产生Sb2Te2Se时,Sb和Te中的核心能级结合能增加0.3 eV,而在Bi2Se3中,核心电子的结合能在Bi被Sb取代后不会改变。测得的核能级位移是由初始状态电荷分布的变化引起的,并导致Sb2Te2Se晶体中键合的平均离子度增加。由光电子能谱强度计算得到的Sb2Te2Se样品的表面组成与晶体的整体组成非常吻合,而(Bi0.7Sb0.3)(2)Se-3样品则显示出Bi的富集。研究了在各种冲击条件下氩离子轰击对表面成分的影响。观察到由于原子溅射产率不同,Sb2Te2Se和(Bi0.7Sb0.3))(2)Se-3样品中Sb和Bi的表面富集。从在不同检测角度下测得的光电子光谱的相对强度可以得出,通过XPS方法采样的表层的有序排列在离子能量低至200 eV且剂量I> 2的情况下受到溅射的破坏。 / cm(2)。 [参考:24]

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