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首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >Phase transitions and electrical properties of (Na_(0.5)K_(0.5))NbO3-Bi(Sc_(0.5)Fe_(0.5))O3 lead-free piezoelectric ceramics
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Phase transitions and electrical properties of (Na_(0.5)K_(0.5))NbO3-Bi(Sc_(0.5)Fe_(0.5))O3 lead-free piezoelectric ceramics

机译:(Na_(0.5)K_(0.5))NbO3-Bi(Sc_(0.5)Fe_(0.5))O3无铅压电陶瓷的相变和电性能

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摘要

Lead-free ceramics (1-x)(Na_(0.5)K_(0.5))NbO_(3-x)Bi(Sc_(0.5)Fe_(0.5))O3 (KNN-BSF, x = 0-0.08) were synthesized by conventional solid-state sintering. A morphotropic phase boundary (MPB) is formed in the ceramics near x = 0.01-0.02 at room temperature by X-ray analysis. Dielectric temperature spectra indicate the existence of two dielectric anomalous peaks, which correspond to orthorhombic-tetragonal (Tot) and tetragonal-cubic (T_C) transitions. The ceramic with x = 0.0125 near the MPB exhibits the following optimal electrical properties: P_r = 33.9 μC/cm~2, E_c = 18.1 kV/cm, d_(33) = 255pC/N, k_p = 0.44, and T_C = 372°C.
机译:合成了无铅陶瓷(1-x)(Na_(0.5)K_(0.5))NbO_(3-x)Bi(Sc_(0.5)Fe_(0.5))O3(KNN-BSF,x = 0-0.08)通过常规的固态烧结。通过X射线分析,在室温下,在x = 0.01-0.02附近的陶瓷中形成了相变相界(MPB)。介电温度谱表明存在两个介电异常峰,分别对应于斜方四边形(Tot)和四方立方(T_C)跃迁。在MPB附近x = 0.0125的陶瓷具有以下最佳电性能:P_r = 33.9μC/ cm〜2,E_c = 18.1 kV / cm,d_(33)= 255pC / N,k_p = 0.44,T_C = 372° C。

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