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首页> 外文期刊>Journal of Research of the National Institute of Standards and Technology >Mass Absorption Coefficient of Tungsten and Tantalum 1450 eV to 2350 eV: Experiment, Theory, and Application
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Mass Absorption Coefficient of Tungsten and Tantalum 1450 eV to 2350 eV: Experiment, Theory, and Application

机译:钨和钽1450 eV至2350 eV的质量吸收系数:实验,理论和应用

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摘要

The mass absorption coefficients of tungsten and tantalum were measured with soft x-ray photons from 1450 eV to 2350 eV using an undulator source. This region includes the M_3, M_4, and M_5 absorption edges. X-ray absorption fine structure was calculated within a real-space multiple scattering formalism; the predicted structure was observed for tungsten and to a lesser degree tantalum as well. Separately, the effects of dynamic screening were observed as shown by an atomic calculation within the relativistic time-dependent local-density approximation. Dynamic screening effects influence the spectra at the 25 percent level and are observed for both tungsten and tantalum. We applied these results to characterize spatially-resolved spectra of a tungsten integrated circuit interconnect obtained using a scanning transmission x-ray microscope. The results indicate tungsten fiducial markers were deposited into silica trenches with a depths of 50 percent and 60 percent of the markers' heights.
机译:钨和钽的质量吸收系数是使用波荡器光源用1450 eV至2350 eV的软X射线光子测量的。该区域包括M_3,M_4和M_5吸收边缘。 X射线吸收精细结构是在真实空间多重散射形式中计算的;观察到了钨和较小程度的钽的预测结构。分别地,在相对论的时间相关局部密度近似中,如原子计算所示,观察到了动态筛选的效果。动态屏蔽效应在25%的水平上影响光谱,并且在钨和钽中都可以观察到。我们应用这些结果来表征使用扫描透射X射线显微镜获得的钨集成电路互连的空间分辨光谱。结果表明钨基准标记沉积在二氧化硅沟槽中的深度为标记高度的50%和60%。

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