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首页> 外文期刊>Journal of the Magnetics Society of Japan >CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Zn-Fe Ferrite Core Inductor
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CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Zn-Fe Ferrite Core Inductor

机译:嵌入式Zn-Fe铁氧体磁芯电感器在有机中介层中制造的CMOS开关降压DC-DC转换器

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摘要

To achieve a package-level DC power grid for the next-generation power delivery to LSIs, multiple point-of-load (POL) buck DC-DC converters must be integrated into the package. We developed a 180 nm CMOS switch DC-DC buck converter for the POL DC power supply using a Zn-Fe ferrite core planar inductor embedded in an organic interposer. The embedded inductor had a 25 μm thick copper spiral coil sandwiched by 10 μm thick Zn-Fe ferrite thick film fabricated using the spin-spray method, which exhibited an inductance of 4.6 nH and a Q-factor of 11 at 50 MHz. A 180 nm CMOS switch was mounted using a flip-chip scheme on the organic interposer with the embedded inductor. The developed 50 MHz switching CMOS switch buck DC-DC converter exhibited a power conversion efficiency of about 68% when the input voltage was 2 V, the on-duty ratio was 0.5, the output voltage was 0.855 V, and the current was 1 A.
机译:为了实现用于向LSI的下一代供电的封装级DC电源网格,必须将多个负载点(POL)降压DC-DC转换器集成到封装中。我们使用嵌入在有机中介层中的Zn-Fe铁氧体磁芯平面电感器为POL DC电源开发了180 nm CMOS开关DC-DC降压转换器。嵌入式电感器具有一个25μm厚的铜螺旋线圈,该线圈夹在通过自旋喷涂方法制造的10μm厚的Zn-Fe铁氧体厚膜之间,在50 MHz时表现出4.6 nH的电感和11的Q系数。使用倒装芯片方案将180 nm CMOS开关安装在具有嵌入式电感器的有机中介层上。当输入电压为2 V,占空比为0.5,输出电压为0.855 V,电流为1 A时,开发的50 MHz开关CMOS开关降压DC-DC转换器的功率转换效率约为68%。 。

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