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首页> 外文期刊>Journal of the Physical Society of Japan >Electronic Structure of Single-Crystalline Mg_xAl_(1-x)B_2 Probed by X-ray Diffraction Multipole Refinements and Polarization-Dependent X-ray Absorption Spectroscopy
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Electronic Structure of Single-Crystalline Mg_xAl_(1-x)B_2 Probed by X-ray Diffraction Multipole Refinements and Polarization-Dependent X-ray Absorption Spectroscopy

机译:X射线衍射多极细化和偏振相关的X射线吸收光谱探测的单晶Mg_xAl_(1-x)B_2电子结构

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摘要

X-ray diffraction multipole refinements of single-crystalline Mg_xAl_(1-x)B_2 and polarization-dependent near-edge x-ray absorption fine structure at the B 1s edge reveal a strongly anisotropic electronic structure. Comparing the data for superconducting compounds (x = 0.8, 1.0) with those for the non-superconductor (x = 0) gives direct evidence for a rearrangement of the hybridizations of the boron p_z bonds and underline the importance of holes in the σ-bonded covalent sp~2 states for the superconducting properties of the diborides. The data indicate that Mg is approximately divalent in MgB_2 and suggest predominantly ionic bonds between the Mg ions and the two-dimensional covalent B rings. For A1B_2 (x = 0), on the other hand, about 1.5 electrons per A1 atom are transferred to the B sheets while the residual 1.5 electrons remain at the A1 site which suggests significant covalent bonding between the A1 ions and the B sheets. This finding together with the static electron deformation density points to almost equivalent electron counts on B sheets of MgB_2 and AlB_2, yet with a modified bonding nature and a completely different electron/hole distribution between the σ and π bonds. While the electrons are predominantly confined to the in-plane σ and π states in MgB_2, they are found in covalent bond clusters between Al and the adjacent B-B bonds and have a. more three-dimensional character for AlB_2.
机译:单晶Mg_xAl_(1-x)B_2的X射线衍射多极细化和B 1s边缘的偏振相关近边缘x射线吸收精细结构显示出强烈的各向异性电子结构。将超导化合物(x = 0.8,1.0)的数据与非超导化合物(x = 0)的数据进行比较,可以直接证明硼p_z键杂化的重排,并强调了σ键合孔的重要性二硼化物的超导性质的共价sp〜2态。数据表明,Mg在MgB_2中大约是二价的,表明Mg离子和二维共价B环之间主要存在离子键。另一方面,对于A1B_2(x = 0),每个A1原子大约有1.5个电子转移到B片,而剩余的1.5个电子保留在A1位置,这表明A1离子和B片之间存在显着的共价键。这一发现与静态电子变形密度一起指向MgB_2和AlB_2的B片上几乎相等的电子数,但具有改进的键合性质,并且σ和π键之间的电子/空穴分布完全不同。尽管电子主要被限制在MgB_2中的面内σ和π状态,但它们存在于Al与相邻的B-B键之间的共价键簇中并具有a。 AlB_2具有更多的三维特征。

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