PROPERTIES OF ANTI-DIFFUSION NICKELLAYERS DEPOSITED ON BISMUTHTELLURIDE BY ELECTRIC-ARC METHOD

V V. Razinkov; V. Yu. Lelek

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PROPERTIES OF ANTI-DIFFUSION NICKELLAYERS DEPOSITED ON BISMUTHTELLURIDE BY ELECTRIC-ARC METHOD

机译：电弧法沉积在铋硒酸盐上的抗扩散尼克尔的性质

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Process peculiarities of anti-diffusion nickel layers deposition onto bismuth telluride basedternary compounds by electric-arc method have been studied. Design of electric-arc metallizerhas been improved and optimal conditions for preparation of 80-100 μm thick nickel layershave been determined. For said layers, the values of contact resistance and electric resistivityhave been obtained, the adhesion characteristics have been studied.

机译：研究了通过电弧法在碲化铋基三元化合物上沉积防扩散镍层的工艺特点。改进了电弧镀铝机的设计，确定了制备80-100μm厚镍层的最佳条件。对于所述层，已经获得了接触电阻和电阻率的值，已经研究了粘合特性。

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《Journal of thermoelectricity》 |2008年第1期|共6页
作者
V V. Razinkov; V. Yu. Lelek;
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正文语种 eng
中图分类工程材料学;
关键词
PROPERTIES; ANTI-DIFFUSION; DEPOSITED;

机译：性能;抗扩散;沉积;

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1. PROPERTIES OF ANTI-DIFFUSION NICKELLAYERS DEPOSITED ON BISMUTHTELLURIDE BY ELECTRIC-ARC METHOD [J] . V V. Razinkov, V. Yu. Lelek Journal of thermoelectricity . 2008,第1期

机译：电弧法沉积在铋硒酸盐上的抗扩散尼克尔的性质
2. Thickness dependent physical properties of chemically deposited nanocrystalline MgSe thin films deposited at room temperature by solution growth method [J] . Ubale A.U., Sakhare Y.S. Materials science in semiconductor processing . 2013,第6期

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PROPERTIES OF ANTI-DIFFUSION NICKELLAYERS DEPOSITED ON BISMUTHTELLURIDE BY ELECTRIC-ARC METHOD

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